TY  - JOUR
SN  - 2516-0230
EP  - 6060
VL  - 6
IS  - 24
A1  - Singh, Niharika
A1  - Srivastava, Kingshuk
A1  - Kumar, Ajay
A1  - Yadav, Neha
A1  - Yadav, Ashish
A1  - Dubey, Santosh
A1  - Singh, Rajesh
A1  - Gehlot, Anita
A1  - Verma, Ajay Singh
A1  - Gupta, Neha
A1  - Kumar, Tanuj
A1  - Wu, Yongling
A1  - Hongyu, Zheng
A1  - Mondal, Aniruddha
A1  - Pandey, Kailash
A1  - Brajpuriya, Ranjeet
A1  - Kumar, Shalendra
A1  - Gupta, Rajeev
Y1  - 2024/09//
SP  - 6044
N2  - In recent years, nanotechnology and materials science have evolved and matured, making it increasingly easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-intensive, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems via wearable, flexible devices, etc. To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed. Furthermore, the paper stresses the importance of novel materials and architectures, such as monolithic 3D integration and heterogeneous integration, in overcoming these challenges. We emphasize the importance of addressing complex issues to achieve better performance and higher integration density, which will play an important role in shaping the next generation of microelectronic devices. The multifaceted challenges involved in developing next-generation 3D microelectronic devices are also highlighted.
ID  - uninimx15643
AV  - public
TI  - Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density
UR  - http://doi.org/10.1039/d4na00578c
JF  - Nanoscale Advances
ER  -