Challenges and opportunities in engineering next-generation 3D microelectronic devices: improved performance and higher integration density

Niharika Singh; Kingshuk Srivastava; Ajay Kumar; Neha Yadav; Ashish Yadav; Santosh Dubey; Rajesh Singh; Anita Gehlot; Ajay Singh Verma; Neha Gupta; Tanuj Kumar; Yongling Wu; Zheng Hongyu; Aniruddha Mondal; Kailash Pandey; Ranjeet Brajpuriya; Shalendra Kumar; Rajeev Gupta

Resumen:

In recent years, nanotechnology and materials science have evolved and matured, making it increasingly easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-intensive, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems via wearable, flexible devices, etc. To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed. Furthermore, the paper stresses the importance of novel materials and architectures, such as monolithic 3D integration and heterogeneous integration, in overcoming these challenges. We emphasize the importance of addressing complex issues to achieve better performance and higher integration density, which will play an important role in shaping the next generation of microelectronic devices. The multifaceted challenges involved in developing next-generation 3D microelectronic devices are also highlighted.